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About this Materials Science article
Effects of Ti addition and annealing on high-k Gd2O3 sensing membranes on polycrystalline silicon for extended-gate field-effect transistor applications by Kao, Chyuan Haur; Chen, Hsiang; Huang, Chuan-Yu is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Kao, Chyuan Haur; Chen, Hsiang; Huang, Chuan-Yu
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)
- Published
- 2013
- Field
- Materials Science (Physical Sciences)
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