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About this Engineering article
Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy by Daisuke Kosemura; Maki Hattori; Tetsuya Yoshida; Toshikazu Mizukoshi; Atsushi Ogura is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Daisuke Kosemura; Maki Hattori; Tetsuya Yoshida; Toshikazu Mizukoshi; Atsushi Ogura
- Publisher
- Springer US; Springer-Verlag; Springer New York LLC; Springer Science and Business Media LLC (ISSN 0361-5235)
- Published
- 2010
- Field
- Engineering (Physical Sciences)