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What is Donor-Acceptor Impurities in Semiconductors about?
Donor-acceptor and impurity-to-band transitions occur in semiconductors and give rise to radiative recombination. Donor energies in GaAs are typically 4-8 meV while acceptor energies are 25-40 meV. Donor-acceptor transitions produce broad emission peaks. Impurity-related indirect transitions involve phonon emission, with photon energy given by Eg - Ei - Ep. Deep levels in semiconductors like vacancies, interstitials, and impurity complexes act as non-radiative recombination centers, degrading radiative effi
- Author
- nidhi patel
- Language
- EN