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Programming Correlated Magnetic States via Gate Controlled Moir\'e Geometry by Anderson, Eric; Fan, Feng-Ren; Cai, Jiaqi; Holtzmann, William; Taniguchi, Takashi; Watanabe, Kenji; Xiao, Di; Yao, Wang; Xu, Xiaodong is a scholarly article available to read on EtoBox.

What is Programming Correlated Magnetic States via Gate Controlled Moir\'e Geometry about?

Understanding quantum many-body systems is at the heart of condensed matter physics. The ability to control the underlying lattice geometry of a system, and thus its many-body interactions, would enable the realization of and transition between emergent quantum ground states. Here, we report in-situ gate switching between honeycomb and triangular lattice geometries of an electron many-body Hamiltonian in R-stacked MoTe2 moir\'e bilayers, resulting in switchable magnetic exchange interactions. At zero electric field, we observe a correlated ferromagnetic insulator near one hole per moir\'e unit cell ({\nu}=-1), i.e., a quarter-filled honeycomb lattice, with a widely tunable Curie temperature up to 14K. Fully polarizing layer pseudospin via electric field switches the system into a half-filled triangular lattice with antiferromagnetic interactions. Further doping this layer-polarized superlattice introduces carriers into the empty layer, tuning the antiferromagnetic exchange interaction back to ferromagnetic. Our work demonstrates R-stacked MoTe2 moir\'es to be a new laboratory for engineering correlated states with nontrivial topology.

Author

Anderson, Eric; Fan, Feng-Ren; Cai, Jiaqi; Holtzmann, William; Taniguchi, Takashi; Watanabe, Kenji; Xiao, Di; Yao, Wang; Xu, Xiaodong

Published

2023

Language

EN