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About this Materials Science article
Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$HfO2 interfacial layer formed by atomic layer deposition by Karabulut, Abdulkerim is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Karabulut, Abdulkerim
- Publisher
- Springer-Verlag; Indian Academy of Sciences; New Delhi: Springer India; Springer Science and Business Media LLC; Society for Mining, Metallurgy and Exploration Inc. (ISSN 0250-4707)
- Published
- 2019
- Language
- EN
- Field
- Materials Science (Physical Sciences)