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Validity of vegard's rule for the lattice parameter and the stiffness elastic constant ratios of the AlGaAs ternary compound by L. De Caro; C. Giannini; L. Tapfer; H.-P. Schönherr; L. Däweritz; K.H. Ploog is a Physics and Astronomy article available to read on EtoBox.

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A new procedure for the determination of the Poisson ratio, the elastic stiffness constant ratios and the lattice parameter of epitaxial films is presented which is based on the strain tensor determination by highresolution X-ray diffraction by using epitaxial layers simultaneously grown on three different substrate orientations and different alloy compositions. Our method allows us to verify the validity of the Vegard's rule and/or to evidence a difference in the incorporation of group-III-elements in ternary III-V semiconductor films. We discuss the results obtained from Al x Ga 11x As epilayers coherently grown simultaneously on (1 0 0)-, (2 1 0)and (3 1 1)-GaAs substrate crystals. Assuming a GaAs lattice parameter d GaAs 1⁄4 0:565325 Ϯ 0:000002 nm our experiment yields the AlAs lattice parameter d AlAs 1⁄4 0:566139 Ϯ 0:000005 nm. The stiffness elastic lattice constant ratios for AlAs is c 12 =c 11 1⁄4 0:475 Ϯ 0:003, which leads to a Poisson ratio n 1⁄4 0:322 Ϯ 0:001 and c 44 =c 11 1⁄4 0:517 Ϯ 0:003. An analogous analysis for the ternary Al x Ga 11x As compound with x 1⁄4 0:5 yields a lattice parameter value and elastic constant ratios which are in agreement with the Vegard's ru

Who reads Validity of vegard's rule for the lattice parameter and the stiffness elastic constant ratios of the AlGaAs ternary compound?

Author

L. De Caro; C. Giannini; L. Tapfer; H.-P. Schönherr; L. Däweritz; K.H. Ploog

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0038-1098)

Published

1998

Language

EN

Field

Physics and Astronomy (Physical Sciences)