Opening book details…
About this Engineering article
Positron Trapping Model in N-Type Semiconductors with Vacancies by Doyama, Masao is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Doyama, Masao
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 1995
- Field
- Engineering (Physical Sciences)