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Can I read Electrical transport mechanism for semi-conducting YBa2Cu3Oz: A complementary study on EtoBox?
Electrical transport mechanism for semi-conducting YBa2Cu3Oz: A complementary study by P. Gerdanian; C. Picard is a Materials Science article available to read on EtoBox.
What is Electrical transport mechanism for semi-conducting YBa2Cu3Oz: A complementary study about?
This article is devoted to the study of a particularity in the variations of the electrical resistance, R, of YBazCujO, as a function of temperature, T, at constant composition, z, as measured in a previous study. For T > 300 K and for z near 6.3, on increasing T, InR, which is at first an increasing T-function, goes through a maximum and becomes at last a decreasing T-function. These experimental results may be satisfactorily interpreted by using the electrical transport model we have previously worked out for semiconducting (SC) YBazCuJO,: these SC compounds behave as a Fermi glass with an Anderson transition occurring on changing z. The InR maximum appears to be due to the competition between two processes: the excitation of the carriers from the Fermi level to the extended states at the mobility edge and their diffusion similar to the one occurring in the metallic regime. Some consequences of this model arc developed, particularly concerning a phonon drag contribution, S,, to the Seebeck coefficient, S. The ratio SJS appears as exceptionally large and indicates a strong phonon-carrier coupling.
Who reads Electrical transport mechanism for semi-conducting YBa2Cu3Oz: A complementary study?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- P. Gerdanian; C. Picard
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0022-3697)
- Published
- 1998
- Language
- EN
- Field
- Materials Science (Physical Sciences)