About this scholarly article

AIP Conference Proceedings [AIP APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: Twenty-First International Conference - Fort Worth, Texas, (USA) (8–13 August 2010)] - Oxygen-Atom Defects In 6H Silicon Carbide Implanted Using 24- MeV O[sup 3+] Ions Measured Using Three-Dimensional Positron Annihilation Spectroscopy System (3DPASS) by Williams, Christopher S.; Duan, Xiaofeng F.; Petrosky, James C.; Burggraf, Larry W.; McDaniel, Floyd D.; Doyle, Barney L. is a scholarly article available to read on EtoBox.

Author

Williams, Christopher S.; Duan, Xiaofeng F.; Petrosky, James C.; Burggraf, Larry W.; McDaniel, Floyd D.; Doyle, Barney L.

Publisher

AIP

Published

2011