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Nanosheet FET Design for High-Speed Switching by Saimon Islam Shakil is a document available to read on EtoBox.
What is Nanosheet FET Design for High-Speed Switching about?
This research article presents the design and analysis of a nanosheet field-effect transistor (NsFET) aimed at enhancing performance in high-speed switching applications. The proposed silicon-based NsFET demonstrates a high ION/IOFF ratio exceeding 105, making it suitable for low-power applications despite challenges like threshold voltage reduction with increased NS width. The study highlights the potential of NsFETs to address limitations faced by traditional multigate devices, thereby paving the way for
- Author
- Saimon Islam Shakil
- Language
- EN