Opening book details…
About this Chemistry article
Hafnium Oxide and Zirconium Oxide Atomic Layer Deposition: Initial Precursor and Potential Side-Reaction Product Pathways with H/Si(100)-2×1 by Fenno, Ryan D.; Halls, Mathew D.; Raghavachari, Krishnan is a Chemistry article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Chemistry.
- Author
- Fenno, Ryan D.; Halls, Mathew D.; Raghavachari, Krishnan
- Publisher
- American Chemical Society; American Chemical Society (ACS); Williams & Wilkins Co. (ISSN 0022-3654)
- Published
- 2005
- Language
- EN
- Field
- Chemistry (Physical Sciences)
More by Fenno, Ryan D.; Halls, Mathew D.; Raghavachari, Krishnan
Browse all works by Fenno, Ryan D.; Halls, Mathew D.; Raghavachari, Krishnan