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About this Engineering article
Reaction mechanisms governing the selected-area growth of III-V semiconductors by chemical beam epitaxy by Foord, J S; French, C L; Levoguer, C L; Davies, G J; Skevington, P J is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Foord, J S; French, C L; Levoguer, C L; Davies, G J; Skevington, P J
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 1993
- Language
- EN
- Field
- Engineering (Physical Sciences)
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