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The oxidation behavior of a dense amorphous silicon carbonitride (SiCN) ceramic was studied at temperatures between 900-1200°C. The thickness of the oxide layer was measured as a function of time. The data fit a parabolic kinetic model, indicating the oxidation rate followed parabolic behavior. The measured oxidation rate constant and activation energy of 120 kJ/mol for the SiCN ceramic were close to those of CVD silicon carbide and single crystal silicon carbide, suggesting the oxidation mechanism is the s

Author

Huckkey Hu

Language

EN