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Can I read Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy on EtoBox?
Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy by V. Lebedev; F.M. Morales; V. Cimalla; J.G. Lozano; D. González; M. Himmerlich; S. Krischok; J.A. Schaefer; O. Ambacher is a Physics and Astronomy article available to read on EtoBox.
What is Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy about?
The strain-relaxation phenomena and the formation of a dislocation network in 2H -InN epilayers during molecular beam epitaxy are reported. The proposed growth model emphasizes the dominant role of the coalescence process in the formation of a dislocation network in 2H -InN. Edge type threading dislocations and dislocations of mixed character have been found to be the dominating defects in wurtzite InN layers. It is demonstrated that these dislocations are active suppliers of electrons and an exponential decay of their density with the thickness implies a corresponding decay in the carrier density. Room temperature mobility in excess of 1500 cm 2 V -1 s -1 was obtained for ∼800 nm thick InN layers with dislocation densities of ∼3 × 10 9 cm -2 .
Who reads Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- V. Lebedev; F.M. Morales; V. Cimalla; J.G. Lozano; D. González; M. Himmerlich; S. Krischok; J.A. Schaefer; O. Ambacher
- Publisher
- Elsevier Science; Elsevier ; Elsevier Inc.; Elsevier BV (ISSN 0749-6036)
- Published
- 2006
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)