About this scholarly article

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Breakdown and conduction mechanisms of ALD HfSiON dielectric with TaN gate using carrier separation analysis by Seek Joo Doh, ; Jung Hyomig Lee, ; Jong Pyo Kim, ; Jong-Ho Lee, ; Yun-Seok Kim, ; Ha-Jin Lim, ; Hyung-Suk Jung, ; Sung Kee Han, ; Min Joo Kim, ; Nae-In Lee, ; Ho-Kyu Kang, ; Seong Geon Park, ; Sang Bom Kang, is a scholarly article available to read on EtoBox.

Author

Seek Joo Doh, ; Jung Hyomig Lee, ; Jong Pyo Kim, ; Jong-Ho Lee, ; Yun-Seok Kim, ; Ha-Jin Lim, ; Hyung-Suk Jung, ; Sung Kee Han, ; Min Joo Kim, ; Nae-In Lee, ; Ho-Kyu Kang, ; Seong Geon Park, ; Sang Bom Kang,

Publisher

IEEE

Published

2005

Language

EN