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Insulated Gate Bipolar Transistor IGBT Theory and Design by Vinod Kumar Khanna is a nonfiction available to read on EtoBox.

What is Insulated Gate Bipolar Transistor IGBT Theory and Design about?

Insulated Gate Bipolar Transistors (IGBT): Theory and Design covers basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physics necessary for clearly understanding the subject matter, including chapters on: * Non-punchthrough, punchthrough, vertical double diffused MOSFET and trench-gate IGBTs improved lateral and novel IGBT structures and emerging technologies * Steady-state and dynamic operation, and soft switching performance safe operating area and reliability tests of IGBT * IGBT physics, device and circuit models * IGBT unit cell design and latching suppression techniques * IGBT fabrication steps and process design * IGBT power modules

Who reads Insulated Gate Bipolar Transistor IGBT Theory and Design?

Author

Vinod Kumar Khanna

Publisher

WileyBlackwell

Published

2003

Language

EN

Category

nonfiction