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Growth of Ferrite Thin Films Using Molecular Beam Epitaxy by Karsten Fleischer; Daragh Mullarkey; Igor V. Shvets is a book available to read on EtoBox.

What is Growth of Ferrite Thin Films Using Molecular Beam Epitaxy about?

For application in spintronic devices, thin film ferrite oxides require high crystalline quality of the layers, sharp interfaces with low roughness and defect density, and precise control of the stoichiometry. One deposition technique known for its versatility, production of samples with the highest crystalline quality, exceptional control over deposition parameters, and a wealth of in situ monitoring tools is molecular beam epitaxy (MBE). In MBE, a flux of atoms is typically provided by thermally evaporated metals (from Knudsen cells) and is directed to a heated substrate where the film is formed. 1À3 The kinetic energy of the incoming atoms is very small; hence, no impact damage is caused by the incoming flux on the growing film. MBE systems are operated with ultrahigh vacuum (UHV) conditions for both cleanliness and to ensure a large mean-free path of the supplied atom flux. UHV conditions also allow for electrons to be used for in situ surface analysis, typically by reflection highenergy electron diffraction (RHEED). In the most basic configuration of oxide MBE, the oxygen is supplied in molecular form with partial pressures as high as 1 3 10 23 Pa. Metal flux rates, as well as

Author

Karsten Fleischer; Daragh Mullarkey; Igor V. Shvets

Publisher

Elsevier Science & Technology

Published

2023

Language

EN

ISBN

9780128237175

Updated

2026-03-24