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High-Field Electron Transport in Nanoscale Group-III Nitride Devices by S.M. Komirenko; K.W. Kim; V.A. Kochelap; M.A. Stroscio is a Physics and Astronomy article available to read on EtoBox.

What is High-Field Electron Transport in Nanoscale Group-III Nitride Devices about?

Focusing on the short-size group-III nitride heterostructures, we have developed a model which takes into account main features of transport of electrons injected into a polar semiconductor under high electric fields. The model is based on an exact analytical solution of Boltzmann transport equation. The electron velocity distribution over the device is analyzed at different fields and the basic characteristics of the high-field electron transport are obtained. The critical field for the runaway regime, when electron energies and velocities increase with distance which results in the average velocities higher than the peak velocity in bulk-like samples, is determined. We have found that the runaway electrons are characterized by a distribution function with population inversion. Different nitride-based small-size devices where this effect can have an impact on the device performance are considered.

Who reads High-Field Electron Transport in Nanoscale Group-III Nitride Devices?

Author

S.M. Komirenko; K.W. Kim; V.A. Kochelap; M.A. Stroscio

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

2001

Language

EN

Field

Physics and Astronomy (Physical Sciences)