Can I read Wet chemical etching of AlN in KOH solution on EtoBox?

Wet chemical etching of AlN in KOH solution by I. Cimalla; Ch. Foerster; V. Cimalla; V. Lebedev; D. Cengher; O. Ambacher is a Engineering article available to read on EtoBox.

What is Wet chemical etching of AlN in KOH solution about?

## Abstract In this work we investigated the influence of the AlN material quality on the etching rate in KOH‐based solutions. Thus, AlN layers were deposited by three different methods on sapphire and silicon substrates (i) by metal organic chemical vapor deposition (MOCVD), (ii) by molecular beam epitaxy (MBE), and (iii) by reactive sputter deposition. The etch rate is strongly dependent on crystal quality and etch temperatures. The high quality MBE‐AlN could be etch anisotropic with a preferred lateral component in [11$ \bar 2$0] direction at 60 °C while the polycrystalline AlN layers we etched isotropic and homogenously already at room temperature. The wet chemical etching in KOH solution is mainly an etching along defects and grain boundaries. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads Wet chemical etching of AlN in KOH solution?

Author

I. Cimalla; Ch. Foerster; V. Cimalla; V. Lebedev; D. Cengher; O. Ambacher

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2006

Language

EN

Field

Engineering (Physical Sciences)