Can I read One-directional 3D-SiC MESFET for high power applications on EtoBox?

One-directional 3D-SiC MESFET for high power applications by Ramana Thakkallapally; Vamshi Veesam; Ibrahim Abdel-Motaleb; Zheng Shen is a scholarly article available to read on EtoBox.

What is One-directional 3D-SiC MESFET for high power applications about?

A one-directional 3D normally-on SiC MESFET, suitable for safe multi-KW/cm 2 power applications, is designed and analyzed using the numerical analysis simulator, Silvaco Atlas. The analyses show that the drain current is a 100% higher than a surface device with the same dimensions, while occupying less than 33% of the area. At gate voltage of 0V, the drain current reaches 600 mA/mm with a breakdown voltage greater than 600V. The proposed vertical structure allows for more efficient heat dissipation and can be easily connected in parallel to provide power of more than 10 kW/cm 2 .

Author

Ramana Thakkallapally; Vamshi Veesam; Ibrahim Abdel-Motaleb; Zheng Shen

Publisher

IEEE

Published

2014

Language

EN