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About this Engineering article
Design of high speed Si/SiGe heterojunction complementary metal–oxide–semiconductor field effect transistors with reduced short-channel effects by P. W. Li; W. M. Liao is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- P. W. Li; W. M. Liao
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
- Published
- 2002
- Field
- Engineering (Physical Sciences)