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What is Dopant Distribution in Crystal Growth about?

This document discusses crystal growth techniques for doping semiconductors, including Czochralski growth and float zone growth. It addresses the distribution of dopants during crystal growth and defines the equilibrium segregation coefficient and effective segregation coefficient. Equations are presented to model the doping concentration in a crystal as it grows from a melt or as a rod passes through a molten zone. Examples of segregation coefficients for various dopants in silicon are also provided.

Author

Bapanapalli Tejeshwar

Language

EN