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The article investigates the electronic structure modifications of two-dimensional pentagonal PdS2 materials under external strain, revealing that they are indirect band gap semiconductors. The study finds that the band gap decreases with increasing tensile strain and can increase under compressive strain, indicating potential for electro-mechanical applications. The research employs density functional theory to analyze the effects of uniaxial and biaxial strains on the electronic properties of PdS2 monolay

Author

lnthanh54

Language

EN