About this document
Point Defects and Diffusion in Silicon by Polina Rudakovskaya is a document available to read on EtoBox.
This document summarizes point defects, diffusion processes, and swirl defect formation in silicon. It discusses three main topics: 1) Oxidation effects establish that silicon self-interstitials and vacancies coexist under thermal equilibrium and oxidation conditions. Oxidation induces a self-interstitial supersaturation and vacancy undersaturation. 2) Atomic diffusion in silicon can occur via self-interstitials or vacancies. The contributions of each to diffusion processes and how they are impacted by o
- Author
- Polina Rudakovskaya
- Language
- EN