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ChemInform Abstract: Epitaxial Growth of Cubic SiC Films on Si Substrates by High Vacuum Chemical Vapor Deposition Using 1,3-Disilabutane. by K.-W. LEE; K.-S. YU; J.-H. BOO; Y. KIM; T. HATAYAMA; T. KIMOTO; H. MATSUNAMI is a Chemistry article available to read on EtoBox.
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- Author
- K.-W. LEE; K.-S. YU; J.-H. BOO; Y. KIM; T. HATAYAMA; T. KIMOTO; H. MATSUNAMI
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley (ISSN 0931-7597)
- Published
- 1997
- Field
- Chemistry (Physical Sciences)
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