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About this Materials Science article
The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE by A. S. Brown; M. Losurdo; T. H. Kim; M. M. Giangregorio; S. Choi; M. Morse; P. Wu; P. Capezzuto; G. Bruno is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- A. S. Brown; M. Losurdo; T. H. Kim; M. M. Giangregorio; S. Choi; M. Morse; P. Wu; P. Capezzuto; G. Bruno
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 0232-1300)
- Published
- 2005
- Language
- EN
- Field
- Materials Science (Physical Sciences)