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Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga~2~O~3~ for a Solar-Blind Photodiode by Hyun Kim; Sergey Tarelkin; Alexander Polyakov; Sergey Troschiev; Sergey Nosukhin; Mikhail Kuznetsov; Jihyun Kim is a Engineering article available to read on EtoBox.
What is Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga~2~O~3~ for a Solar-Blind Photodiode about?
The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β-Ga~2~O~3~ nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch. Rectifying current-voltage characteristics with a rectification ratio exceeding 10^7^ were obtained with a high reverse hard breakdown voltage of 135 V. This UWBG p-n heterojunction diode exhibited good thermal stability at elevated temperatures, retaining its high rectification ratio and low reverse leakage current. Excellent photoresponse characteristics, including responsivity (12 A W^−1^), rejection ratio (8.5 × 10^3^), photo-to-dark-current ratio (3900), and fast response/decay characteristics, were observed from the diamond/β-Ga~2~O~3~ p-n heterojunction photodiode, showing no persistent photoconductivity. The mixed-dimensional p-n heterojunction diode based on two UWBG semiconductors (p-type diamond and n-type β-Ga~2~O~3~) can be used as a robust building block in next-generatio
Who reads Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga~2~O~3~ for a Solar-Blind Photodiode?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hyun Kim; Sergey Tarelkin; Alexander Polyakov; Sergey Troschiev; Sergey Nosukhin; Mikhail Kuznetsov; Jihyun Kim
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 2162-8769)
- Published
- 2020
- Language
- EN
- Field
- Engineering (Physical Sciences)