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Application of low damage SIMS/AES/XPS of the Ba-O-W system to cathode characterization by B.C. Lamartine; J.v. Czarnecki; T.W. Haas is a Engineering article available to read on EtoBox.

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The activation of an impregnated dispenser cathode was characterized by SIMS, AES, and XPS on the basis of analogous results from prepared thin film model standards of the Ba-O-W system. Proper SIMS characterization required low damage conditions (500 eV Ar +, 5 nA/cm 2) and ultrahigh vacuum (better than 2 × 10-10 Torr during analysis). Individual low damage SIMS yields from different model structures varied by several orders of magnitude; and consequently, the identification of the activated cathode structure from model compound yields was straightforward. While X-ray induced AES of cathodes requires curve synthesis to identify the activation transition with temperature, the low damage SIMS yields showed obvious but continuous transitions through the activation temperatures. \* Permanent address: Materialpriifstelle der Bundeswehr, D-8058 Erding, Fed. Rep.i of Germany.

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Author

B.C. Lamartine; J.v. Czarnecki; T.W. Haas

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0378-5963)

Published

1983

Language

EN

Field

Engineering (Physical Sciences)