Can I read Gadolinium Oxide Thin Films by Atomic Layer Deposition on EtoBox?

Gadolinium Oxide Thin Films by Atomic Layer Deposition by Jaakko Niinistö; Nikolina Petrova; Matti Putkonen; Lauri Niinistö; Kai Arstila; Timo Sajavaara is a Engineering article available to read on EtoBox.

What is Gadolinium Oxide Thin Films by Atomic Layer Deposition about?

Gadolinium oxide thin films have been deposited on Si(1 0 0) by atomic layer deposition (ALD) using as precursors either a b-diketonate-type chelate, namely Gd(thd) 3 (thd 1⁄4 2,2,6,6-tetramethyl-3,5-heptanedione) and ozone or a true organometallic (CpCH 3 ) 3 Gd (Cp 1⁄4 cyclopentadienyl, ÀC 5 H 5 ) together with water. Self-limiting ALD growth mode was detected for the Gd(thd) 3 /O 3 process at 300 1C with a growth rate of 0.3 A ̊/cycle. In the case of the (CpCH 3 ) 3 Gd/ H 2 O process, partial decomposition of the metal precursor affected the film growth mechanism. However, at 250 1C, the uniform films obtained from (CpCH 3 ) 3 Gd and H 2 O showed almost an ideal stoichiometry with low impurity contents (e.g. 0.5 at% of C) as analyzed by time-of-flight elastic recoil detection analysis (TOF-ERDA). X-ray diffraction data indicated that Gd 2 O 3 films obtained by the Cp-based process were crystalline with cubic C-type structure when deposited even at 150 1C. The strongest reflection changed from (4 0 0) to (2 2 2) at deposition temperatures around 200 1C. Oxygen-rich films grown by the Gd(thd) 3 /O 3 process were amorphous at deposition temperatures below 250 1C but crystalline wi

Who reads Gadolinium Oxide Thin Films by Atomic Layer Deposition?

Author

Jaakko Niinistö; Nikolina Petrova; Matti Putkonen; Lauri Niinistö; Kai Arstila; Timo Sajavaara

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2005

Language

EN

Field

Engineering (Physical Sciences)