About this scholarly article

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Simulation Study on Current Collapse Effect of E GaN HEMT by Weiling, Guo; Qijing, Ma; Shuai, Du; Tianyu, Lin; Yanxu, Zhu is a scholarly article available to read on EtoBox.

Author

Weiling, Guo; Qijing, Ma; Shuai, Du; Tianyu, Lin; Yanxu, Zhu

Publisher

IEEE

Published

2019

Language

EN