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About this Engineering article
Design and Development of MBE Grown AlGaN/ GaN HEMT Devices on SiC Substrates for RF Applications by Sood, Ashok K; Singh, Rajwinder; Puri, Yash R; Clarke, Frederick W; Dabiran, Amir; Chow, Peter; Deng, Jie; Hwang, James C.M. is a Engineering article available to read on EtoBox.
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- Author
- Sood, Ashok K; Singh, Rajwinder; Puri, Yash R; Clarke, Frederick W; Dabiran, Amir; Chow, Peter; Deng, Jie; Hwang, James C.M.
- Publisher
- Cambridge University Press; Cambridge University Press (Materials Research Society); Cambridge University Press (CUP) (ISSN 0272-9172)
- Published
- 2005
- Language
- EN
- Field
- Engineering (Physical Sciences)