About this scholarly article

2014 IEEE International Electron Devices Meeting - Low Power III–V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 µA/µm at Ioff=1 nA/µm and VDS=0.5 V by Huang, C. Y.; Lee, S.; Chobpattana, V.; Stemmer, S.; Gossard, A. C.; Thibeault, B.; Mitchell, W.; Rodwell, M. is a scholarly article available to read on EtoBox.

Author

Huang, C. Y.; Lee, S.; Chobpattana, V.; Stemmer, S.; Gossard, A. C.; Thibeault, B.; Mitchell, W.; Rodwell, M.

Publisher

IEEE

Published

2014

Language

EN