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The study investigates the critical tensile and compressive strains at which Al2O3 films grown by atomic layer deposition (ALD) crack on polymer substrates. It finds that thinner films exhibit higher critical strains, with a tensile strain of 0.52% for 80 nm thickness and 2.4% for 5 nm, while compressive strains reach approximately 1.0% for 30-50 nm thickness. These findings suggest that Al2O3 ALD films are suitable for use as flexible gas diffusion barriers in electronic applications.

Author

Damon Ciou

Language

EN