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About this Engineering article
An analytical drain current model of short-channel MOSFETs including source/drain resistance effect by Ho, C. S.; Liou, J. J.; Lo, H. L.; Chang, Y. H.; Chang, C.; Yu, K. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ho, C. S.; Liou, J. J.; Lo, H. L.; Chang, Y. H.; Chang, C.; Yu, K.
- Publisher
- Taylor and Francis Group; Informa UK (Taylor & Francis); Taylor & Francis; Informa UK Limited (ISSN 0020-7217)
- Published
- 2006
- Language
- EN
- Field
- Engineering (Physical Sciences)
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