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The document describes the bipolar junction transistor (BJT), which consists of three doped semiconductor regions (emitter, base, collector) arranged as either NPN or PNP. It explains the active mode of operation of an NPN BJT, where the base-emitter junction is forward-biased and the base-collector junction is reverse-biased. This causes majority charge carriers to be injected from the emitter into the base and swept into the collector. Key relationships between the currents and voltages are developed, inc

Author

Mohamed Samir

Language

EN