About this scholarly article

2009 International Conference on Simulation of Semiconductor Processes and Devices - Impact Ionization and Freeze-Out Model for Simulation of Low Gate Bias Kink Effect in SOI-MOSFETs Operating at Liquid He Temperature by Akturk, A.; Peckerar, M.; Dornajafi, M.; Goldsman, N.; Eng, K.; Gurrieri, T.; Carroll, M. S. is a scholarly article available to read on EtoBox.

Author

Akturk, A.; Peckerar, M.; Dornajafi, M.; Goldsman, N.; Eng, K.; Gurrieri, T.; Carroll, M. S.

Publisher

IEEE

Published

2009

Language

EN