About this Physics and Astronomy article
Study of Hall and effective mobilities in pseudomorphic Si[sub 1−x]Ge[sub x] p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K by Lander, R. J. P.; Emeleus, C. J.; McGregor, B. M.; Parker, E. H. C.; Whall, T. E.; Evans, A. G. R.; Kennedy, G. P. is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Lander, R. J. P.; Emeleus, C. J.; McGregor, B. M.; Parker, E. H. C.; Whall, T. E.; Evans, A. G. R.; Kennedy, G. P.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 1997
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)