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Study on Crystallization of Hydrogenated Nanocrystalline Silicon Carbon Films by Weiqiang Han; Shoushan Fan; Binglin Gu is a Materials Science article available to read on EtoBox.

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Hydrogenated nanocrystalline silicon carbon (nc-SiC~:H) films were prepared by RF glow discharge of gas mixture of silane (Sill4) and ethene (C2H4) diluted heavily by hydrogen (H2). The effect of the gas volume ratio of (Sill4 + C2H4)/H2 (X~) and C2H4/(SiH 4 -t-C2FI4) (-J~¢) on the crystallization and composition of films are described in the paper. When the Xg increases from 2 to 5%, the volume fraction of the crystalline phase decreases from 48 to 8% and the mean crystallites size is varied from 3.5 to 9 nm because the etching effect of hydrogen becomes weak. When X~ >\_ 6%, the deposited films of hydrogenated amorphous silicon carbon are formed. When Xc increases from 0.1 to 0.4, the volume fraction of the crystalline phase decreases from 45 to 10%, the mean crystallites size decreases from 10 to 5.5 nm, and the C content of the films increases from 0.03 to 0.12. When X¢ > 0.5, the deposited films are hydrogenated amorphous silicon carbon films. Thegrowth process and crystallization mechanism of nc-SiQ~:H films are discussed in detail.

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Author

Weiqiang Han; Shoushan Fan; Binglin Gu

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)

Published

1996

Language

EN

Field

Materials Science (Physical Sciences)