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Effects Due to Backscattering and Pseudogap Features in Graphene Nanoribbons with Single Vacancies by Deretzis, I.; Fiori, G.; Iannaccone, G.; La Magna, A. is a scholarly article available to read on EtoBox.

What is Effects Due to Backscattering and Pseudogap Features in Graphene Nanoribbons with Single Vacancies about?

We present a systematic study of electron backscattering phenomena during conduction for graphene nanoribbons with single-vacancy scatterers and dimensions within the capabilities of modern lithographic techniques. Our analysis builds upon an \textit{ab initio} parameterized semiempirical model that breaks electron-hole symmetry and nonequilibrium Green's function methods for the calculation of the conductance distribution $g$. The underlying mechanism is based on wavefunction localizations and perturbations that in the case of the first $\pi-\pi{}^*$ plateau can give rise to impurity-like pseudogaps with both donor and acceptor characteristics. Confinement and geometry are crucial for the manifestation of such effects. Self-consistent quantum transport calculations characterize vacancies as local charging centers that can induce electrostatic inhomogeneities on the ribbon topology.

Author

Deretzis, I.; Fiori, G.; Iannaccone, G.; La Magna, A.

Published

2010

Language

EN