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About this Engineering article
Floating Gate Memory Based on Ferritin Nanodots with High-kGate Dielectrics by K. Ohara; Y. Uraoka; T. Fuyuki; I. Yamashita; T. Yaegashi; M. Moniwa; M. Yoshimaru is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- K. Ohara; Y. Uraoka; T. Fuyuki; I. Yamashita; T. Yaegashi; M. Moniwa; M. Yoshimaru
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)