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About this Engineering article

Growth of SiC and SiCxNy films by pulsed laser ablation of SiC in Ar and N2 environments by Soto, G. is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
Soto, G.
Publisher
AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
Published
1998
Field
Engineering (Physical Sciences)

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