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About this Engineering article
Resistive Non-Volatile Memory Effect Enhanced by a Ferroelectric Buffer Layer on Semiconductive Pr0.7Ca0.3MnO3 Film is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- The Electrochemical Society (ISSN 2151-2043)
- Published
- 2007
- Field
- Engineering (Physical Sciences)