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About this Engineering article
RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with 80 nm Gates by Baca, Albert G.; Klein, Brianna A.; Wendt, Joel R.; Lepkowski, Stefan M.; Nordquist, Christopher D.; Armstrong, Andrew M.; Allerman, Andrew A.; Douglas, Erica A.; Kaplar, Robert J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Baca, Albert G.; Klein, Brianna A.; Wendt, Joel R.; Lepkowski, Stefan M.; Nordquist, Christopher D.; Armstrong, Andrew M.; Allerman, Andrew A.; Douglas, Erica A.; Kaplar, Robert J.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2018
- Language
- EN
- Field
- Engineering (Physical Sciences)