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About this Physics and Astronomy article
Mechanism for Improvement of N-channel Metal-oxide-semiconductor Transistors by Tensile Stress by Yang, Peizhen; Lau, W. S.; Lai, Seow Wei; Lo, V. L.; Toh, L. F.; Wang, Jacob; Siah, S. Y.; Chan, L. is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Yang, Peizhen; Lau, W. S.; Lai, Seow Wei; Lo, V. L.; Toh, L. F.; Wang, Jacob; Siah, S. Y.; Chan, L.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2010
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)