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About this Engineering article
The electrical breakdown properties of GaAs layers grown by molecular beam epitaxy at low temperature by Luo, J K; Thomas, H; Morgan, D V; Westwood, D; Williams, R H is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Luo, J K; Thomas, H; Morgan, D V; Westwood, D; Williams, R H
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 1994
- Language
- EN
- Field
- Engineering (Physical Sciences)
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