Skip to content

Opening book details…

About this Materials Science article

Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions by Shekhawat, Aniruddh; Walters, Glen; Yang, Ning; Guo, Jing; Nishida, Toshikazu; Moghaddam, Saeed is a Materials Science article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Materials Science.

Author
Shekhawat, Aniruddh; Walters, Glen; Yang, Ning; Guo, Jing; Nishida, Toshikazu; Moghaddam, Saeed
Publisher
Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0957-4484)
Published
2020
Field
Materials Science (Physical Sciences)

More by Shekhawat, Aniruddh; Walters, Glen; Yang, Ning; Guo, Jing; Nishida, Toshikazu; Moghaddam, Saeed

Browse all works by Shekhawat, Aniruddh; Walters, Glen; Yang, Ning; Guo, Jing; Nishida, Toshikazu; Moghaddam, Saeed