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Can I read Study of GaN and InGaN films grown by metalorganic chemical vapour deposition on EtoBox?
Study of GaN and InGaN films grown by metalorganic chemical vapour deposition by W. Van der Stricht; I. Moerman; P. Demeester; J.A Crawley; E.J. Thrush is a Engineering article available to read on EtoBox.
What is Study of GaN and InGaN films grown by metalorganic chemical vapour deposition about?
In this paper GaN and InGaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The GaN and InGaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.
Who reads Study of GaN and InGaN films grown by metalorganic chemical vapour deposition?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- W. Van der Stricht; I. Moerman; P. Demeester; J.A Crawley; E.J. Thrush
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 1997
- Language
- EN
- Field
- Engineering (Physical Sciences)
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