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This research article investigates the polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures, focusing on how the thickness of AlGaN and GaN cap layers affects Hall sheet carrier density and mobility. The study finds that sheet carrier density increases with AlGaN thickness while it decreases with GaN cap layer thickness, with simulations closely matching the experimental data. The research highlights the significance of polarization charge at the interfaces and provides insights into the ban

Author

iancbghs2018

Language

EN