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The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs by O.M. Alatise; K.S.K. Kwa; S.H. Olsen; A.G. O’Neill is a Engineering article available to read on EtoBox.

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The impact of the thickness of the silicon-germanium strain-relaxed buffer (SiGe SRB) on the analog performance of strained Si nMOSFETs is investigated. The negative drain conductance caused by self-heating at high power levels leads to negative self-gain which can cause anomalous circuit behavior like non-linear phase shifts. Using AC and DC measurements, it is shown that reducing the SRB thickness improves the analog design space and performance by minimizing self-heating. The range of terminal voltages that leverage positive self-gain in 0.1 lm strained Si MOSFETs fabricated on 425 nm SiGe SRBs is increased by over 100% compared with strained Si devices fabricated on conventional SiGe SRBs 4 lm thick. Strained Si nMOSFETs fabricated on thin SiGe SRBs also show 45% improvement in the self-gain compared with the Si control as well as 25% enhancement in the on-state performance compared with the strained Si nMOS-FETs on the 4 lm SiGe SRB. The extracted thermal resistance is 50% lower in the strained Si device on the thin SiGe SRB corresponding to a 30% reduction in the temperature rise compared with the device fabricated on the 4 lm SiGe SRB. Comparisons between the maximum drain v

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Author

O.M. Alatise; K.S.K. Kwa; S.H. Olsen; A.G. O’Neill

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)