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The document discusses DRAM retention issues, highlighting the need for periodic refreshes to maintain data integrity due to charge leakage in DRAM cells. It presents the RAIDR approach, which intelligently refreshes DRAM rows based on their retention time profile, leading to significant reductions in refresh overhead and power consumption. Additionally, it addresses DRAM disturbance errors, which can occur when adjacent rows are accessed frequently, posing reliability and security risks in modern systems.
- Author
- Amna Ejaz
- Language
- EN